The Cambridge Centre for Gallium Nitride, part of the department of Materials Science and Metallurgy in the University of Cambridge, is one of the leading centres for gallium nitride growth and structural characterisation in the world. It has over a decade of growth experience on sapphire substrates including nitrides in the semipolar orientation and 8 years of growth on silicon substrates up to 150 mm diameter. UCAM has MOVPE growth systems and a suite of electron microscopes including an FEI Titan electron microscope with an aberration corrector and a monochromator. It has facilities for electron holography, EELS, EFTEM, HAADF, EDX, CBED, etc. The main tasks in the project will be MOVPE growth of semipolar GaN on patterned Si wafers, microstructural charactersiation of semipolar GaN templates, semipolar AlGaInN QW and QD structures (Dr. Menno Kappers, Prof. Colin Humphreys)

Selected publications:

• T. Zhu, C.F. Johnston, M.J. Kappers and R.A. Oliver, J. Appl. Phys. 108, 083521 (2010)
• D. Zhu, C. McAleese, M. Häberlen, C. Salcianu, E.J. Thrush, M.J. Kappers, W.A. Phillips, P. Lane, M. Kane, D.J. Wallis, T. Martin, M. Astles, N. Hylton, P. Dawson and C.J. Humphreys, J. Appl. Phys. 109, 014502 (2011).