OSRAM Opto Semiconductors

As the world’s second largest manufacturer of optoelectronic semiconductors for the illumination, sensing and visualization sectors, OSRAM Opto Semiconductors (OOS) combines extensive know-how in semiconductor technology, converter materials and packages under one roof. The extensive semiconductor product portfolio of OOS includes high-power LEDs in the visible range, high-performance infrared LEDs, high-quality optoelectronic detectors, sensors and high-power semiconductor lasers. The company is located in Regensburg, Germany, where the most advanced optical chip factory in the world was opened in April 2003. OSRAM OS employs around 1800 people at its site in Regensburg which was expanded in 2007. The company benefits from more than thirty years of experience in the development and production of optoelectronic semiconductor components and LED devices. This is evidenced by more than 3000 patents in the various areas of semiconductor technology. Main technical tasks of OSRAM are the electrical and electro-optical characterisation of epitaxial layers and device structures, benchmarking at all stages of the LED-process and design of a highly efficient white multichip-LED (Dr. Matthias Peter, Dr Tobias Mayer and Dr Martin Strassburg)

Selected publications:

  • Ansgar Laubsch, Matthias Sabathil, Johannes Baur, Matthias Peter and Berthold Hahn, “High-Power and High-Efficiency InGaN-Based Light Emitters”, IEEE Transactions on electron devices, Vol. 57, No.1, 2010
  • Andreas Plößl, Johannes Baur, Dieter Eißler, Karl Engl, Volker Härle, Berthold Hahn, Alexander Heindl, Stefan Illek, Christoph Klemp, Patrick Rode, Klaus Streubel and Ivar Tangrin, “Wafer Bonding for the Manufacture of High-Brightness and High-Efficiency Light-Emitting Diodes”, ECS Transactions, 33 (4) 613-624 (2010)
  • A. Laubsch, M. Sabathil, W. Bergbauer, M. Strassburg, H. Lugauer, M. Peter, S. Lutgen, N. Linder, K. Streubel, J. Hader, J. V. Moloney, B. Pasenow and S. W. Koch, phys. stat. sol. C, 6, S.913-6 (2009).
  • Johannes Baur, et al, “Status of high efficiency and high power ThinGaN-LED development”, Phys. Status Solidi C 6, No. S2, S905–S908 (2009)

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